能源化学(英文版)

能源化学(英文) ›› 2013, Vol. 22 ›› Issue (3): 403-407.

• Articles • 上一篇    下一篇

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Jusang Parka, Han-Bo-Ram Leeb, Doyoung Kimc, Jaehong Yoona, Clement Lansalotd, Julien Gatineaud, Henri Chevreld, Hyungjun Kima   

  1. a. School of Electrical and Electronic Engineering, Yonsei University, Seoul, 120-749, Korea;
    b. School of Materials Science and Engineering, Incheon National University, Incheon, Korea;
    c. School of Electrical and Electronic Engineering, Ulsan College, Ulsan, 680-749, Korea;
    d. Air Liquide Laboratories, Wadai 28, Tsukuba, Ibaraki Pref., Japan
  • 收稿日期:2012-12-17 修回日期:2013-03-15 出版日期:2013-05-20 发布日期:2013-05-31
  • 通讯作者: Hyungjun Kim
  • 基金资助:

    This work was supported by the Technology Innovation Program Industrial Strategic Technology Development Program (10035430), Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE, Korea. The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2.

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Jusang Parka, Han-Bo-Ram Leeb, Doyoung Kimc, Jaehong Yoona, Clement Lansalotd, Julien Gatineaud, Henri Chevreld, Hyungjun Kima   

  1. a. School of Electrical and Electronic Engineering, Yonsei University, Seoul, 120-749, Korea;
    b. School of Materials Science and Engineering, Incheon National University, Incheon, Korea;
    c. School of Electrical and Electronic Engineering, Ulsan College, Ulsan, 680-749, Korea;
    d. Air Liquide Laboratories, Wadai 28, Tsukuba, Ibaraki Pref., Japan
  • Received:2012-12-17 Revised:2013-03-15 Online:2013-05-20 Published:2013-05-31
  • Supported by:

    This work was supported by the Technology Innovation Program Industrial Strategic Technology Development Program (10035430), Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE, Korea. The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2.

摘要： Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 ℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 ℃. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

关键词: PE-ALD, Th-ALD cobalt, metal thin films, metal organic precursors

Abstract: Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 ℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 ℃. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

Key words: PE-ALD, Th-ALD cobalt, metal thin films, metal organic precursors